Newest Publications

Investigating Electronic Devices with Fusion AX

There is no question that an in-depth understanding of the structure-function relationship provides valuable insight into future electronic device design. Whether you are studying semiconductors, memory devices or looking at nanowire behavior under biasing, Protochips uniquely supports this research with the Fusion AX solution. In this email you will find a summary of the publications with high impact that have recently been published in the field.

Atomic Insights into MRAM Breakdown Mechanisms

This recent publication from researchers at the University of Minnesota and the University of Arizona, used the Fusion AX system to increase the understanding of magnetoresistive random-access memory (MRAM) devices. As the need for efficient, reliable data storage grows, spintronic magnetic tunnel junction (MTJ)-based MRAM devices are capturing attention as a promising alternative to traditional memory. This study takes an in-depth look at MTJ devices, focusing on their operational principles and breakdown mechanisms—a critical step for ensuring their success in real-world applications.

Using the Fusion AX system, the research team performed in situ electrical biasing with atomic-resolution STEM, unveiling two distinct breakdown processes. At lower current levels, they observed soft breakdown due to electromigration, which forms ultrathin conductive regions in the MgO layer and edge paths, reducing device resistance. Under higher currents, a complete breakdown occurs through joule heating and electromigration, melting MTJ layers at temperatures below their bulk melting points. These atomic-scale, time-resolved STEM studies provide essential insights into how MRAM devices evolve structurally under stress, highlighting key limits and failure points that inform their design and application

Nanoscale Defect Evolution of HEMT Devices

In this study, the Fusion AX was used to perform electrothermal studies of AlGaN/GaN high electron mobility transistors (HEMTs). Traditionally, HEMT degradation studies rely on post-mortem analysis, but with Fusion AX, researchers can now capture defect evolution in real-time under high-temperature conditions.

In this study, researchers at Penn State University used Protochips’ electrothermal E-chips to simultaneously apply biasing and heating within the TEM, allowing them to observe key failure mechanisms as they happened. Findings revealed critical insights into defect nucleation, It was found that Schottky gate degradation due to Au diffusion, and the evolution of defect clusters that ultimately lead to device failure. These real-time observations provide essential data for improving HEMT reliability and performance at elevated temperatures.

Atomic-Scale Insights into Topological Structures

The next publication was recently published in Advanced Materials to study vortex-antivortex (V-AV) dynamics—key topological structures, which are especially interesting for superconductors and superfluid applications. Using in situ STEM and phase field simulations, researchers observed how polar V-AV pairs behave and transition at atomic scale. They found that V-AV pairs remain stable at room temperature, with their polarization decreasing as temperature rises, and that electric fields drive the annihilation of vortex and antivortex cores.

These findings deepen the understanding of topological phase transitions, offering valuable insights into the behavior of polar antivortices and their role in material dynamics